By Targeted News Service

ALEXANDRIA, Va., July 31 — Globalfoundries, Grand Cayman, Cayman Islands, has been assigned a patent (8,497,179) developed by Akif Sultan, Austin, Texas, for a “method of fabricating multi-fingered semiconductor devices on a common substrate.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method of fabricating p-type metal oxide semiconductor (PMOS) transistor devices on a common substrate is presented. The method provides a first portion of semiconductor material and a second portion of semiconductor material on the common substrate. The first portion of semiconductor material and the second portion of semiconductor material are insulated from each other. The method continues by creating first PMOS transistor devices using the first portion of semiconductor material. The first PMOS transistor devices include stressor regions that impart compressive stress to channel regions of the first PMOS transistor devices. The method also creates second PMOS transistor devices using the second portion of semiconductor material. The second PMOS transistor devices do not include channel stressor regions.”

The patent application was filed on Jan. 8, 2010 (12/684,697). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,97,179.PN.&OS=PN/84,97,179&RS=PN/84,97,179